Fabrication of GaSb quantum rings on GaAs(001) by droplet epitaxy

被引：8
作者：
Kunrugsa, Maetee [1 ]
Tung, Kar Hoo Patrick [2 ]
Danner, Aaron James [2 ]
Panyakeow, Somsak [1 ]
Ratanathammaphan, Somchai [1 ]
机构：
[1] Chulalongkorn Univ, NANOTEC Ctr Excellence, Dept Elect Engn, Semicond Device Res Lab, Bangkok 10330, Thailand
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
来源：
JOURNAL OF CRYSTAL GROWTH | 2015年 / 425卷
关键词：
Nanostructures; Droplet epitaxy; Molecular beam cpitaxy; Semiconducting III-V materials GaSb; DOTS; NANOSTRUCTURES;
D O I：
10.1016/j.jcrysgro.2015.01.018
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report the achievement in the fabrication of self assembled GaSb quantum rings (QRs) on GaAs (0 0 1) substrates by droplet epitaxy technique using molecular beam epitaxy. Surface morphology was characterized by atomic force microscopy. The QR formation can be described by the diffusion of Ga atoms out of an initial Ga droplet during crystallization with Sb flux. The understanding of the formation mechanism lights up the way to grow more complex GaSb nanostructures by droplet epitaxy. The optical properties of GaSb QRs in a GaAs matrix were investigated by photoluminescence (PL). Power- and temperature dependent PL measurements were performed to study the carrier dynamics and to observe the characteristics of type II band alignment. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：287 / 290
页数：4
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