Deprotonation mechanism of poly(styrene-acrylate)-based chemically amplified resist

被引：0
|
作者：
Tajima, Y. [1 ]
Okamoto, K. [1 ,2 ]
Kozawa, T. [2 ,3 ]
Tagawa, S. [2 ,3 ]
Fujiyoshi, R. [1 ]
Sumiyoshi, T. [1 ]
机构：
[1] Hokkaido Univ, Fac Engn, Div Quantum Sci & Engn, Kita Ku, N13,W8, Sapporo, Hokkaido 0608628, Japan
[2] Japan Sci & Technol Agcy, CREST, Saitama 3320012, Japan
[3] Osaka Univ, ISIR, Ibaraki, Osaka 5670047, Japan
来源：
ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVIII | 2011年 / 7972卷
关键词：
Lithography; resist; EUV; electron beam; pulse radiolysis; hole transfer; acid yield; deprotonation; ELECTRON-BEAM; POLYSTYRENE; DYNAMICS;
D O I：
10.1117/12.879362
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The influence of degree of copolymerization of poly(styrene-ran-methyl methacrylate) [P(S-MMA)] on the deprotonation mechanism for EUV chemically amplified resists were investigated by pulse radiolysis, quantity of the acid yield, and density functional theory methods. The degradation of MMA unit occurs immediately before the hole transfer to the styrene unit in P(S-MMA) in the low PS mole fraction (< 50 %). The hole transfer from MMA unit to styrene units occurred in the high PS mole fraction (> 70 %). It is assumed that the formation of styrene multimer (n > 3) causes the hole transfer.
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页数：7
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