Low Frequency Noise Analysis of Top-Gate MgZnO Thin-Film Transistor with High-κ ZrO2 Gate Insulator

被引：8

作者：

Chiu, Hsien-Chin ^{[1
]}

Wang, Hsiang-Chun ^{[1
]}

Lin, Che-Kai ^{[1
]}

Chiu, Chau-Wei ^{[1
]}

Fu, Jeffrey S. ^{[1
]}

Hsueh, Kuang-Po ^{[2
]}

Chien, Feng-Tso ^{[3
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

[2] Vanung Univ, Dept Elect Engn, Tao Yuan 320, Taiwan

[3] Feng Chia Univ, Dept Elect Engn, Taichung 407, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 09期

关键词：

annealing; binding energy; energy gap; flicker noise; insulated gate field effect transistors; magnesium; semiconductor doping; sputter deposition; thin film transistors; X-ray photoelectron spectra; zinc compounds;

D O I：

10.1149/1.3606545

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this work, depletion-mode magnesium doped zinc-oxide (MgZnO) channel thin film transistors (TFTs) with zirconium oxide (ZrO2) gate insulator were fabricated using radio frequency magnetron sputtering deposition. Sputtered MgZnO TFT channel layer performed an average transmittance of 90% and an improved energy bandgap of 5.02 eV after 700 degrees C post annealing. X-ray photoelectron spectroscopy (XPS) results indicated that the binding energy of Zn-O bonds and Mg-O bonds were enhanced following with the increasing of the post annealing temperatures. The low frequency noise spectra also indicated that the ZrO2/MgZnO was dominated by flicker noise and gate leakage induced noise was suppressed. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3606545] All rights reserved.

引用

页码：H385 / H388

页数：4

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