To investigate the effect of Sm doping on the electrical properties of Ba(Zr0.2Ti0.8)O-3-x(Ba0.7Ca0.3)TiO3 (BZT-xBCT) (x = 40, 50, 60) ceramics, three Sm-modified ceramics were prepared using the conventional solid-state reaction method. Related electrical measurements, including ferroelectric and dielectric investigations and impedance spectroscopy, were recorded for these ceramics. It was found that a tilted morphotropic phase boundary resulted from the addition of Sm, which induced the best piezoelectric properties and insulating behaviour in the Sm-BZT-60BCT sample. An abnormal P-E loop shrinkage appeared in the Sm-BZT-50BCT sample but not in the other two samples. This could be attributable to the different electronegativities between Ca2+ and Ba2+ and between Zr2+ and Ti4+, whose contents are different in varied samples and have an effect on defect-dipole alignment as well as spontaneous polarization. The activation energies for the bulk conductivity in the three composites were calculated to be 0.28 +/- 0.01, 0.08 +/- 0.01, and 0.36 +/- 0.01 eV, confirming the existence of oxygen vacancies in our samples. The Sm dopant is responsible for the oxygen vacancies. This also leads to an increased Curie temperature in the three composites.
机构:
Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R ChinaSun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
Lin, Yanting
Wu, Guangheng
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Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R ChinaSun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
Wu, Guangheng
Qin, Ni
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Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R ChinaSun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
Qin, Ni
Bao, Dinghua
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Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R ChinaSun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
机构:
Chung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South KoreaChung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea
Oh, Yoo-Young
Lee, Gwangseop
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Chung Ang Univ Seoul, Dept Intelligent Energy & Ind, Seoul 06974, South KoreaChung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea
Lee, Gwangseop
Kamiko, Masao
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Univ Tokyo, Inst Ind Sci, Tokyo 1138668, JapanChung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea
Kamiko, Masao
Koh, Jung-Hyuk
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Chung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea
Chung Ang Univ Seoul, Dept Intelligent Energy & Ind, Seoul 06974, South KoreaChung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea
Koh, Jung-Hyuk
KOREAN JOURNAL OF METALS AND MATERIALS,
2022,
60
(02):
: 141
-
148
机构:
Pibulsongkram Rajabhat Univ, Fac Sci & Technol, Program Phys, Phitsanulok 65000, ThailandPibulsongkram Rajabhat Univ, Fac Sci & Technol, Program Phys, Phitsanulok 65000, Thailand
Mathrmool, Krailas
Kumar, Nitish
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机构:
Univ New South Wales, Mat Sci & Engn, Sydney, NSW 2052, AustraliaPibulsongkram Rajabhat Univ, Fac Sci & Technol, Program Phys, Phitsanulok 65000, Thailand
Kumar, Nitish
Sumang, Rattiphorn
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Pibulsongkram Rajabhat Univ, Fac Sci & Technol, Program Phys, Phitsanulok 65000, ThailandPibulsongkram Rajabhat Univ, Fac Sci & Technol, Program Phys, Phitsanulok 65000, Thailand
机构:
Indian Inst Technol Madras, Dept Appl Mech, Chennai 600036, Tamil Nadu, India
Indian Inst Technol Madras, Ceram Technol Grp, Ctr Excellence Mat & Mfg Futurist Mobil, Chennai 600036, Tamil Nadu, IndiaIndian Inst Technol Mandi, Sch Engn, Mandi 175005, Himachal Prades, India
机构:
School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou,510006, China
Institute for Superconducting and Electronic Materials, University of Wollongong, Squires Way, North-Wollongong,NSW,2500, AustraliaSchool of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou,510006, China
Feng, Zuyong
Luo, Jie
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School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou,510006, ChinaSchool of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou,510006, China
Luo, Jie
Zhang, Wei
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机构:
School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou,510006, ChinaSchool of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou,510006, China
Zhang, Wei
Tang, Xingui
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机构:
School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou,510006, ChinaSchool of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou,510006, China
Tang, Xingui
Cheng, Zhenxiang
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机构:
Institute for Superconducting and Electronic Materials, University of Wollongong, Squires Way, North-Wollongong,NSW,2500, AustraliaSchool of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou,510006, China
Cheng, Zhenxiang
Shi, Dongqi
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机构:
Institute for Superconducting and Electronic Materials, University of Wollongong, Squires Way, North-Wollongong,NSW,2500, AustraliaSchool of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou,510006, China
Shi, Dongqi
Dou, Shixue
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h-index: 0
机构:
Institute for Superconducting and Electronic Materials, University of Wollongong, Squires Way, North-Wollongong,NSW,2500, AustraliaSchool of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou,510006, China