Depth-Adjustable Magnetostructural Phase Transition in Fe60V40 Thin Films

被引：5

作者：

Anwar, Md. Shadab ^{[1
,5
]}

Cansever, Hamza

Boehm, Benny ^{[1
,2
]}

Gallardo, Rodolfo A. ^{[3
]}

Huebner, Rene ^{[1
]}

Zhou, Shengqiang ^{[1
]}

Kentsch, Ulrich ^{[1
]}

Rauls, Simon ^{[4
]}

Eggert, Benedikt ^{[4
]}

Wende, Heiko ^{[4
]}

Potzger, Kay ^{[1
]}

Fassbender, Juergen ^{[1
]}

Lenz, Kilian ^{[1
]}

Lindner, Jurgen ^{[1
]}

Hellwig, Olav ^{[1
,2
]}

Bali, Rantej ^{[1
]}

机构：

[1] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany

[2] Tech Univ Chemnitz, Inst Phys, D-09126 Chemnitz, Germany

[3] Univ Tecn Federico Santa Maria, Dept Fis, Valparaiso 2390123, Chile

[4] Univ Duisburg Essen, Fac Phys, Ctr Nanointegrat Duisburg Essen CENIDE, D-47057 Duisburg, Germany

[5] Tech Univ Dresden, Fak Phys, D-01069 Dresden, Germany

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2022年 / 4卷 / 08期

关键词：

magneto-structural correlations; phase transitions; magnetic thin films; ion irradiation; short-range order; FE-V ALLOYS; MAGNETIC-PROPERTIES; AMORPHOUS ALLOY; NANOSTRUCTURES; MOMENTS; ORDER;

D O I：

10.1021/acsaelm.2c00499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Phase transitions occurring within spatially confined regions can be useful for generating nanoscale material property modulations. Here we describe a magneto-structural phase transition in a binary alloy, where a structural transition from short-range order (SRO) to body centered cubic (bcc) results in the formation of depth-adjustable ferromagnetic layers, which reveal application-relevant magnetic properties of high saturation magnetization (M-s) and low Gilbert damping (alpha). Here we use Fe60V40 binary alloy films which transform from initially M-s = 17 kA/m (SRO structure) to 747 kA/m (bcc structure) driven by atomic displacements caused by penetrating ions. Simulations show that an estimated similar to 1 displacement per atom triggers a structural transition, forming homogeneous ferromagnetic layers. The thickness of a ferromagnetic layer increases as a step-like function of the ion fluence. Microwave excitations of the ferromagnetic/non-ferromagnetic layered system reveals an alpha = 0.0027 +/- 0.0001. The combination of nanoscale spatial confinement, low alpha, and high M-s provides a pathway for the rapid patterning of magnetic and microwave device elements.

引用

页码：3860 / 3869

页数：10

共 57 条

[1] Quantitative control of magnetic ordering in FeRh thin films using 30 keV Ga ion irradiation from a focused ion beam system [J].