Nonlinear optical investigations on Al doping ratio in ZnO thin film under pulsed Nd:YAG laser irradiation

被引:31
作者
Abrinaei, Fahimeh [1 ]
Shirazi, Marzieh [2 ]
机构
[1] Islamic Azad Univ, East Tehran Branch, Dept Phys, Tehran, Iran
[2] Islamic Azad Univ, Sci & Res Branch, Young Researchers & Elite Club, Tehran, Iran
关键词
SURFACE CHARACTERIZATION; ELECTRICAL-PROPERTIES; TEMPERATURE; DEPOSITION; DOPANTS; GA;
D O I
10.1007/s10854-017-7690-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the present study, it has been reported on the effect of Al doping on linear and nonlinear optical properties of ZnO thin films synthesized by spray pyrolysis method. The structural properties of ZnO thin films with different Al doping levels (0-4 wt%) were analyzed using X-ray diffraction (XRD). The results obtained from XRD analysis indicated that the grain size decreased as the Al doping value increased. The UV-Vis diffused refraction spectroscopy was used for calculation of band gap. The optical band gap of Al-doped ZnO (AZO) thin films is increased from 3.26 to 3.31 eV with increasing the Al content from 0 to 4 wt%. The measurements of nonlinear optical properties of AZO thin films have been performed using a nanosecond Nd:YAG pulse laser at 532 nm by the Z-scan technique. The undoped ZnO thin film exhibits reverse saturation absorption (RSA) whereas the AZO thin films exhibit saturation absorption (SA) that shows RSA to SA process with adding Al to ZnO structure under laser irradiation. On the other hand, all the films showed a self-defocusing phenomenon because the photons of laser stay on below the absorption edge of the ZnO and AZO films. The third-order nonlinear optical susceptibility, chi((3)), of AZO thin films, was varied from of the order of 10(-5)-10(-4) esu. The results suggest that AZO thin films may be promising candidates for nonlinear optical applications.
引用
收藏
页码:17541 / 17550
页数:10
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