Electrical Properties of Semi-Insulating GaAs Irradiated with 5 MeV Electrons

被引：0

作者：

Bohacek, P. ^{[1
]}

Zat'ko, B. ^{[1
]}

Sagatova, A. ^{[2
,3
]}

Hybler, P. ^{[3
]}

Sekacova, M. ^{[1
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia

[2] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Bratislava 81219, Slovakia

[3] Slovak Med Univ, Univ Ctr Electron Accelerators, Trencin 91106, Slovakia

来源：

2014 10TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES & MICROSYSTEMS (ASDAM) | 2014年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The resistivity, Hall coefficient, Hall mobility, and Hall concentration in undoped semi-insulating GaAs samples irradiated by 5 MeV electrons of various cumulative doses ranging from 1 kGy to 24 kGy and different dose rate were measured and analysed at the temperature 400 K and 300 K. The resistivity and the electron Hall concentration decrease while Hall coefficient and the electron Hall mobility increase with increasing cumulative electron dose. The electron Hall mobility increased from 6950 cm(2)/Vs to about 7680 cm(2)/Vs at 300 K for both samples irradiated with the cumulative electron dose of 24 kGy.

引用

页码：45 / 48

页数：4

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