Electrical and optical properties of InSb/GaAs QDSC for photovoltaic

被引：5

作者：

Aissat, A. ^{[1
,2
]}

Benyettou, F. ^{[1
]}

Vilcot, J. P. ^{[2
]}

机构：

[1] Univ Blida 1, Lab LATSI, Fac Technol, Blida 09000, Algeria

[2] Univ Sci & Technol Lille 1, UMR CNRS 8520, IEMN, Ave Poincare,60069, F-59652 Villeneuve dAscq, France

来源：

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 2017年 / 42卷 / 30期

关键词：

Component; Quantum dot; Solar cell; Photovoltaic; QUANTUM-DOT; SOLAR-CELLS; PHOTOLUMINESCENCE; INSB; GASB; GAAS;

D O I：

10.1016/j.ijhydene.2017.05.204

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper focuses on the simulation and optimization of electrical and optical properties such as current density-voltage (J-V), external quantum efficiency (EQE) and the photoluminescence spectra (PL) of InSb/GaAs quantum dot solar cell (QDSC). The InSb QDs have been inserted in the intrinsic region of p-i-n GaAs solar cell. Our results have been shown that 30 InSb/GaAs QD layers provide a relative enhancement of 22.35% and 29.30% of the short-circuit current and the efficiency, respectively. With the same number of the QD layers, the absorption range edge of low energy photons has been extended from 900 to 1400 nm. The electrical features obtained for InSb/GaAs QDSC have been compared with those obtained for InAs/GaAs QDSC in goal to show the better structure. The PL spectra has been also compared with experimental result for the same structure. Moreover, the QDSC has been optimized with respect to the thickness of QDs. The optimal conversion efficiency of 10 QD layers is improved from 14.85% to 18.30% by increasing the thickness of the QDs from 5 nm to 20 nm. (C) 2017 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.

引用

页码：19518 / 19524

页数：7

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