Electronic and chemical properties of the c-Si/Al2O3 interface

被引：219

作者：

Werner, Florian ^{[1
]}

Veith, Boris ^{[1
]}

Zielke, Dimitri ^{[1
]}

Kuehnemund, Lisa ^{[2
]}

Tegenkamp, Christoph ^{[2
]}

Seibt, Michael ^{[3
]}

Brendel, Rolf ^{[1
,2
]}

Schmidt, Jan ^{[1
,2
]}

机构：

[1] Inst Solar Energy Res Hamelin ISFH, D-31860 Emmerthal, Germany

[2] Leibniz Univ Hannover, Inst Solid State Phys, D-30167 Hannover, Germany

[3] Univ Gottingen, Inst Phys 4, D-37077 Gottingen, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 11期

关键词：

ULTRATHIN AL2O3 FILMS; SURFACE RECOMBINATION; SILICON-NITRIDE; PASSIVATION; SI;

D O I：

10.1063/1.3587227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using aluminum oxide (Al2O3) films deposited by atomic layer deposition (ALD), the dominant passivation mechanisms at the c-Si/Al2O3 interface, as well as the chemical composition of the interface region, are investigated. The excellent surface passivation quality of thin Al2O3 films is predominantly assigned to a high negative fixed charge density of Q(f) = -(4 +/- 1) x 10(12) cm(-2), which is located within 1 nm of the Si/Al2O3 interface and is independent of the layer thickness. A deterioration of the passivation quality for ultrathin Al2O3 layers is explained by a strong increase in the interface state density, presumably due to an incomplete reaction of the trimethyl-aluminum (TMA) molecules during the first ALD cycles. A high oxygen-to-aluminum atomic ratio resulting from the incomplete adsorption of the TMA molecules is suggested as a possible source of the high negative charge density Q(f) at the Si/Al2O3 interface. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3587227]

引用

页数：6

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