Geometry optimization of interdigitated Metal-Semiconductor-Metal photodiode structures

被引：1
作者：
Averine, S [1 ]
Chan, YC [1 ]
Lam, YL [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Photon Res Grp, Singapore 639798, Singapore
来源：
DESIGN, MODELING AND SIMULATION IN MICROELECTRONICS | 2000年 / 4228卷
关键词：
photodetector; MSM-detector; response time; quantum efficiency; Schottky barrier; semiconductor;
D O I：
10.1117/12.405430
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The optimum geometry of the interdigitated Metal-Semiconductor-Metal photodetector (MSM-PD) is discussed. From the calculated MSM-PD capacitance and transit time of optically generated carriers, the response time is evaluated and analysed. We propose a simple design rule for achieving better high-speed response of the MSM-detector. The optimum interelectrode spacing for interdigitated MSM-PD has been established. The potentialities of different semiconductor materials for high-speed MSM-detectors are examined.
引用
收藏
页码：323 / 329
页数：7
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