Strain-engineered diffusive atomic switching in two-dimensional crystals

被引:94
作者
Kalikka, Janne [1 ,2 ]
Zhou, Xilin [1 ]
Dilcher, Eric [3 ]
Wall, Simon [3 ]
Li, Ju [2 ]
Simpson, Robert E. [1 ]
机构
[1] SUTD, 8 Somapah Rd, Singapore 487372, Singapore
[2] MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA
[3] Barcelona Inst Sci & Technol, Inst Ciencies Foton ICFO, Barcelona 08860, Spain
来源
NATURE COMMUNICATIONS | 2016年 / 7卷
关键词
PHASE-CHANGE; TRANSITION; MEMORY; ORDER;
D O I
10.1038/ncomms11983
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Strain engineering is an emerging route for tuning the bandgap, carrier mobility, chemical reactivity and diffusivity of materials. Here we show how strain can be used to control atomic diffusion in van der Waals heterostructures of two-dimensional (2D) crystals. We use strain to increase the diffusivity of Ge and Te atoms that are confined to 5 angstrom thick 2D planes within an Sb2Te3-GeTe van der Waals superlattice. The number of quintuple Sb2Te3 2D crystal layers dictates the strain in the GeTe layers and consequently its diffusive atomic disordering. By identifying four critical rules for the superlattice configuration we lay the foundation for a generalizable approach to the design of switchable van der Waals heterostructures. As Sb2Te3-GeTe is a topological insulator, we envision these rules enabling methods to control spin and topological properties of materials in reversible and energy efficient ways.
引用
收藏
页数:8
相关论文
共 39 条
[1]  
BALDE L, 1995, J ALLOY COMPD, V216, P285, DOI 10.1016/0925-8388(94)01297-U
[2]   Stretching and Breaking of Ultrathin MoS2 [J].
Bertolazzi, Simone ;
Brivio, Jacopo ;
Kis, Andras .
ACS NANO, 2011, 5 (12) :9703-9709
[3]   Phase change random access memory cell with superlattice-like structure [J].
Chong, TC ;
Shi, LP ;
Zhao, R ;
Tan, PK ;
Li, JM ;
Lee, HK ;
Miao, XS ;
Du, AY ;
Tung, CH .
APPLIED PHYSICS LETTERS, 2006, 88 (12)
[4]   First principles methods using CASTEP [J].
Clark, SJ ;
Segall, MD ;
Pickard, CJ ;
Hasnip, PJ ;
Probert, MJ ;
Refson, K ;
Payne, MC .
ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 2005, 220 (5-6) :567-570
[5]   Epitaxial Heterostructures of Ultrathin Topological Insulator Nanoplate and Graphene [J].
Dang, Wenhui ;
Peng, Hailin ;
Li, Hui ;
Wang, Pu ;
Liu, Zhongfan .
NANO LETTERS, 2010, 10 (08) :2870-2876
[6]   Photoassisted amorphization of the phase-change memory alloy Ge2Sb2Te5 [J].
Fons, P. ;
Osawa, H. ;
Kolobov, A. V. ;
Fukaya, T. ;
Suzuki, M. ;
Uruga, T. ;
Kawamura, N. ;
Tanida, H. ;
Tominaga, J. .
PHYSICAL REVIEW B, 2010, 82 (04)
[7]   Van der Waals heterostructures [J].
Geim, A. K. ;
Grigorieva, I. V. .
NATURE, 2013, 499 (7459) :419-425
[8]  
Ghosh G., 1994, Journal of Phase Equilibria, V15, P349
[9]   A generalized synchronous transit method for transition state location [J].
Govind, N ;
Petersen, M ;
Fitzgerald, G ;
King-Smith, D ;
Andzelm, J .
COMPUTATIONAL MATERIALS SCIENCE, 2003, 28 (02) :250-258
[10]   Amorphous Ge15Te85: density functional, high-energy x-ray and neutron diffraction study [J].
Kalikka, J. ;
Akola, J. ;
Jones, R. O. ;
Kohara, S. ;
Usuki, T. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 24 (01)