Liner materials for direct electrodeposition of Cu

被引:168
作者
Lane, MW [1 ]
Murray, CE [1 ]
McFeely, FR [1 ]
Vereecken, PM [1 ]
Rosenberg, R [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
D O I
10.1063/1.1610256
中图分类号
O59 [应用物理学];
学科分类号
摘要
We identified a family of materials which can be directly electroplated with Cu in acidic plating baths commonly found in the microelectronics industry. Details are presented illustrating a number of important properties of the electroplated Cu/linear material system. These include the adhesion of the plated film to liner material, the recrystallization behavior of the plated film, the texture of the plated film, and the resistivity of the plated film after high-temperature anneals. Finally, an example is presented illustrating the direct plating of Cu across an 8 in. wafer without the use of a Cu seed layer. (C) 2003 American Institute of Physics.
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页码:2330 / 2332
页数:3
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