Facile and solvent-free fabrication of highly oriented ferroelectric copolymer thin films and its application in ferroelectric field effect transistors

被引：11
作者：
Xu, Fan [1 ]
Lin, Dong [1 ]
Xia, Wei [1 ]
Cao, Weiyi [1 ]
Chen, Qiusong [1 ]
Zhang, Qun [1 ]
Zhu, Guodong [1 ]
机构：
[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
来源：
ORGANIC ELECTRONICS | 2019年 / 64卷
关键词：
Ferroelectric polymer; Solvent-free fabrication; Epitaxy; Ferroelectric memory; LARGE-AREA; SEMICONDUCTOR; PERFORMANCE; EPITAXY; SOLUBILITY; ROUTE;
D O I：
10.1016/j.orgel.2018.10.013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An environmentally friendly and solvent-free method was reported for fabrication of ferroelectric copolymer P (VDF-TrFE) thin films directly from their molten mass. Friction-transferred poly(tetrafluoroethylene) (PTFE) templates were used for epitaxy during solidification process. The obtained films showed highly-oriented crystallite structure and improved degree of crystallinity. Electrical measurement indicated that these films presented good ferroelectric property with remnant polarization comparable to those solution deposited and epitaxially processed films. A ferroelectric field effect transistor (FeFET) was constructed with one oxide semiconductor as an active layer and P(VDF-TrFE) as a ferroelectric layer. The memory device showed an ON/ OFF ratio as high as 10(5) and good retention performance during the whole experimental duration. This work developed a new route for environmentally friendly fabrication of organic ferroelectric devices.
引用
收藏
页码：86 / 91
页数：6
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