Occupation probability for acceptor in Al-implanted p-type 4H-SiC

被引：25

作者：

Matsuura, H ^{[1
]}

Sugiyama, K ^{[1
]}

Nishikawa, K ^{[1
]}

Nagata, T ^{[1
]}

Fukunaga, N ^{[1
]}

机构：

[1] Osaka Electrocommun Univ, Dept Elect Engn & Comp Sci, Osaka 5728530, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 04期

关键词：

D O I：

10.1063/1.1589176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al-implanted p-type 4H-SiC layers with different implantation and annealing temperatures are formed, and the temperature dependence of the hole concentration p(T) is obtained by Hall-effect measurements. The Al acceptor level in SiC is deep (similar to180 meV), and its first excited state level calculated by the hydrogenic model is still deep (similar to35 meV), which is close to the acceptor level of B in Si. Therefore, in order to determine the reliable acceptor density (N-A) from p(T), the Fermi-Dirac distribution function is not appropriate for Al acceptors in SiC, and a distribution function including the influence of the excited states of the Al acceptor is required. It is demonstrated that the proposed distribution function is suitable for obtaining the actual relationship between N-A and p(T) in p-type 4H-SiC.(C) 2003 American Institute of Physics.

引用

页码：2234 / 2241

页数：8

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