Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications

被引：47

作者：

Misha, Saiful Haque ^{[1
]}

Tamanna, Nusrat ^{[1
]}

Woo, Jiyong ^{[1
]}

Lee, Sangheon ^{[1
]}

Song, Jeonghwan ^{[1
]}

Park, Jaesung ^{[1
]}

Lim, Seokjae ^{[1
]}

Park, Jaehyuk ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

ECS SOLID STATE LETTERS | 2015年 / 4卷 / 03期

关键词：

Nitrogen; -; RRAM;

D O I：

10.1149/2.0011504ssl

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The switching uniformity and reliability of the TaOx based resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. The nitrogen doped samples shows excellent electrical and reliability characteristics such as small switching variability for 3-bit multilevel per cell (MLC), low power operation and good retention properties. Compared with control sample, improved device characteristics of nitrogen doped device can be explained by nitrogen induced filament confinement. (C) The Author(s) 2015. Published by ECS.

引用

页码：P25 / P28

页数：4

共 28 条

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