CNTFET SPICE Model: Design of a Carbon Nanotube Field Effect Transistor

被引：5

作者：

Farhana, Soheli ^{[1
]}

Alam, A. H. M. Zahirul ^{[1
]}

Khan, Sheroz ^{[1
]}

Motakabber, S. M. A. ^{[1
]}

机构：

[1] Int Islamic Univ Malaysia, Fac Engn, Dept Elect & Comp Engn, Kuala Lumpur 53100, Malaysia

来源：

2014 INTERNATIONAL CONFERENCE ON COMPUTER AND COMMUNICATION ENGINEERING (ICCCE) | 2014年

关键词：

CNTFET; SPICE; small signal; gain; PERFORMANCE;

D O I：

10.1109/ICCCE.2014.81

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In this paper, we elucidate the development of SPICE model of Carbon Nanotube Field Effect Transistor (CNTFET) and analyze the performance of the proposed model. A set of key parameter can be obtained from this model analysis such as drain current variation as a function of the conductance and drain-source voltage. Furthermore, a SPICE small signal model nanotube transistor is developed. It is used for studying the performance of current gain as well as design of nanotube transistor circuits and phase angle with cut-off frequency. CNT diameter is responsible for the better performance of CNTFET. Therefore an optimum diameter of CNT is imposed here to develop CNTFET.

引用

页码：262 / 264

页数：3

共 9 条

[1] Energy components in a lattice of ions and dipoles: Application to the K(THF)(x)C-24 compounds (x=1,2) [J].