Thermal activation of nitrogen acceptors in ZnO thin films grown by MOCVD

被引：3
|
作者：
Dangbegnon, J. K. [1 ]
Talla, K. [1 ]
Botha, J. R. [1 ]
机构：
[1] Nelson Mandela Metropolitan Univ, Dept Phys, Port Elizabeth, South Africa
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 6 | 2010年 / 7卷 / 06期
关键词：
ZnO; MOCVD; doping; defect levels; photoluminescence; annealing; CHEMICAL-VAPOR-DEPOSITION; DOPED ZNO; CONDUCTIVITY; SPECTROSCOPY; LUMINESCENCE;
D O I：
10.1002/pssc.200983264
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nitrogen doping in ZnO is inhibited by spontaneous formation of compensating defects. Perfect control of the nitrogen doping concentration is required, since a high concentration of nitrogen could induce the formation of donor defects involving nitrogen. In this work, the effect of post-growth annealing in oxygen ambient on ZnO thin films grown by Metalorganic Chemical Vapor Deposition, using NO as both oxidant and nitrogen dopant, is studied. After annealing at 700 degrees C and above, low-temperature photoluminescence shows the appearance of a transition at similar to 3.23 eV which is interpreted as pair emission involving a nitrogen acceptor. A second transition at similar to 3.15 eV is also discussed. This work suggests annealing as a potential means for p-type doping using nitrogen. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1545 / 1549
页数：5
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