Physically-based modeling for hole scattering rate in strained Si1-xGex/(100)Si

被引：0

作者：

Wang Bin ^{[1
,2
]}

Hu Hui-yong ^{[2
]}

Zhang He-ming ^{[2
]}

Song Jian-jun ^{[2
]}

Zhang Yu-ming ^{[2
]}

机构：

[1] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China

[2] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

JOURNAL OF CENTRAL SOUTH UNIVERSITY | 2015年 / 22卷 / 02期

基金：

高等学校博士学科点专项科研基金;

关键词：

strained Si1-xGex; biaxial stress; hole scattering rate; effective mass; C-V CHARACTERISTICS; PMOSFET PERFORMANCE; BAND-STRUCTURE; P-MOSFETS; MOBILITY; SIGE; SIMULATION; NANOSCALE; TRANSPORT; GE;

D O I：

10.1007/s11771-015-2539-1

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

Based on the Fermi's golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate (SR) in strained Si1-x Ge (x) /(100)Si was presented, which takes into account a variety of scattering mechanisms, including ionized impurity, acoustic phonon, non-polar optical phonon and alloy disorder scattering. It is indicated that the SRs of acoustic phonon and non-polar optical phonon decrease under the strain, and the total SR in strained Si1-x Ge (x) /(100)Si also decreases obviously with increasing Ge fraction (x). Moreover, the total SR continues to show a constant tendency when x is less than 0.3. In comparison with bulk Si, the total SR of strained Si1-x Ge (x) /(100) Si decreases by about 58%.

引用

页码：430 / 436

页数：7

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