Single phase Si1-xGex nanocrystals and the shifting of the E1 direct energy transition

被引:12
作者
Ngo Ngoc Ha [1 ]
Nguyen Truong Giang [1 ]
Truong Thi Thanh Thuy [1 ]
Nguyen Ngoc Trung [2 ]
Nguyen Duc Dung [3 ]
Saeed, Saba [4 ]
Gregorkiewicz, Tom [4 ]
机构
[1] Hanoi Univ Sci & Technol, Int Training Inst Mat Sci, Hanoi, Vietnam
[2] Hanoi Univ Sci & Technol, Sch Engn Phys, Hanoi, Vietnam
[3] Hanoi Univ Sci & Technol, AIST, Hanoi, Vietnam
[4] Univ Amsterdam, Van der Waals Zeeman Inst WZI, NL-1098 XH Amsterdam, Netherlands
关键词
SiGe alloy nanocrystals; direct bandgap transition; single phase nanocrystals; QUANTUM DOTS; SIGE NANOSTRUCTURES; HIGH-PRESSURE; PHOTOLUMINESCENCE; ABSORPTION; BEHAVIOR; ORIGIN;
D O I
10.1088/0957-4484/26/37/375701
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report preparation and characterization of Si1-xGex alloys with varied composition x of a large range from 0-1. The materials have been obtained by co-sputtering, followed by a heat treatment process at 600, 800, and 1000 degrees C for 30 min in a nitrogen gas atmosphere. X-ray diffraction data have revealed the formation of single-phase nanoparticles in the face-centered cubic (FCC) structure of Si1-xGex alloys. We found that lattice constant a of the Si1-xGex alloys increased linearly with the composition parameter x. Average diameters of the single-phase nanoparticles were estimated to be between 3-10 nm. Further evidence of FCC single-phase Si1-xGex nanoparticles has been obtained by high resolution transmission electron microscopy. From absorption spectra, the gradual shift of the direct phononless transition identified for the E-1 point in the Brillouin zone of bulk Ge is observed in single-phase Si1-xGex nanoparticles as a function of the composition parameter x.
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页数:5
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