Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method

被引：58

作者：

Demina, S. E. ^{[1
]}

Bystrova, E. N. ^{[1
]}

Postoov, V. S. ^{[2
]}

Eskov, E. V. ^{[2
]}

Nikolenko, M. V. ^{[2
]}

Marshanin, D. A. ^{[2
]}

Yuferev, V. S. ^{[3
]}

Kalaev, V. V. ^{[4
]}

机构：

[1] Soft Impact Ltd, St Petersburg 194156, Russia

[2] Monocrystal Inc, Stavropol 355035, Russia

[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[4] Semicond Technol Res GmbH, D-91058 Erlangen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 7-9期

关键词：

computer simulation; mass transfer; kyropoulos method; sapphire;

D O I：

10.1016/j.jcrysgro.2007.11.083

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In the present work, an advanced numerical model is suggested to analyze heat transfer and flow pattern in sapphire crystal growth by the Kyropoulos technique. The new approach accounts for radiative heat exchange in the crystal and convection in the melt, and provides prediction of the crystallization front shape. The model allowed the analysis of several growth setup designs and selection of an optimal configuration. The numerical predictions performed with the CGSim software (www.semitech.us) agree well with available experimental data obtained in optimized crystal growth process reported for the first time. (C) 2007 Published by Elsevier B.V.

引用

页码：1443 / 1447

页数：5

共 14 条

[1] HEAT-TRANSFER IN VERTICAL BRIDGMAN GROWTH OF OXIDES - EFFECTS OF CONDUCTION, CONVECTION, AND INTERNAL RADIATION [J].