Design of a process variation tolerant CMOS opamp in 6H-SiC technology for high-temperature operation

被引：7
作者：
Chen, JS [1 ]
Kornegay, KT
机构：
[1] Texas Instruments Inc, Dallas, TX 75265 USA
[2] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS | 1998年 / 45卷 / 11期
关键词：
high-temperature electronics; opamp; SiC technology; silicon carbide temperature compensation;
D O I：
10.1109/81.735438
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A process variation tolerant silicon carbide CMOS operational amplifier intended for high-temperature operation with a tunable phase margin and unity-gain bandwidth is presented, A novel bias circuit is provided such that the voltage gain of the operational amplifier is insensitive to large threshold voltage and mobility variations. An output stage along with an adaptive biasing technique is developed to produce a full rail-to-rail output voltage swing and a low output resistance. To achieve a large phase margin in the presence of large process variations, a compensation structure using a tunable external voltage is also proposed.
引用
收藏
页码：1159 / 1171
页数：13
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