Investigation of the ZnS-CdHgTe interface

The ZnS-CdxHg1 - xTe interface was investigated using the capacitance-voltage characteristics of MIS structures in experimental samples. During fabrication of the n(+)-p junctions based on p-CdxHg1 - xTe, the density of states within the range N-ss = (1-6) x 10(11) cm(-2) eV(-1) at T = 78 K was obtained. The experiments showed that the conditions in which n(+)-p junctions are fabricated only slightly affect the state of the ZnS-CdHgTe interface. The negative voltages of the flat bands V-FB, even if immediately after deposition of the ZnS films V-FB > 0, point to the enrichment of the ZnS-p-CdHgTe near-surface layer with majority carriers, specifically, holes. This led to a decrease in the leakage current over the surface. During long-term storage (as long as similar to15 years) in air at room temperature, no degradation of differential resistance R-d, current sensitivity S-i, and detectivity D* of such n(+)-p junctions with a ZnS protection film was observed. (C) 2003 MAIK "Nauka / Interperiodica".