Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modules

被引：20

作者：

Findeisen, C ^{[1
]}

Herr, E ^{[1
]}

Schenkel, M ^{[1
]}

Schlegel, R ^{[1
]}

Zeller, HR ^{[1
]}

机构：

[1] ABB Semicond AG, CH-5600 Lenzburg, Switzerland

来源：

MICROELECTRONICS RELIABILITY | 1998年 / 38卷 / 6-8期

关键词：

D O I：

10.1016/S0026-2714(98)00151-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently it was found that biased high voltage IGBTs are more vulnerable to cosmic ray failures than devices like GTOs or thyristors. In order to obtain a reliable extrapolation from test to operating field conditions acceleration factors other than voltage are needed. For this purpose we exposed IGBTs and module diodes to an accelerator neutron beam and to the enhanced cosmic ray flux at 3580 m altitude above sea level. We conclude that neutrons are the most critical particles in cosmic rays with regard to potential device failures. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1335 / 1339

页数：5

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