Investigation of a Hybrid Approach for Normally-Off GaN HEMTs Using Fluorine Treatment and Recess Etch Techniques

被引：8

作者：

Kurt, Gokhan ^{[1
,2
]}

Gulseren, Melisa Ekin ^{[2
]}

Salkim, Gurur ^{[2
]}

Ural, Sertac ^{[2
]}

Kayal, Omer Ahmet ^{[2
]}

Ozturk, Mustafa ^{[2
]}

Butun, Bayram ^{[2
]}

Kabak, Mehmet ^{[1
]}

Ozbay, Ekmel ^{[2
,3
,4
,5
]}

机构：

[1] Ankara Univ, Fac Engn, Dept Engn Phys, TR-06100 Ankara, Turkey

[2] Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey

[3] Bilkent Univ, Dept Elect & Elect Engn, TR-06800 Ankara, Turkey

[4] Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey

[5] Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkey

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2019年 / 7卷 / 01期

关键词：

AlGaN; GaN; enhancement-mode; fluorine plasma implantation; recess etch; HEMT; normally-off; ALGAN/GAN HEMTS; MIS-HEMT; MODE; VOLTAGE; SI;

D O I：

10.1109/JEDS.2019.2899387

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment duration) and epitaxial differences (AlGaN and carbon doped GaN buffers) on the DC characteristics of the normally off HEMTs were investigated. Two different epitaxial structures and three different process variations were compared. Epitaxial structures prepared with an AlGaN buffer showed a higher threshold voltage (V-th = +3.59 V) than those prepared with a GaN buffer (V-th = + 1.85 V).

引用

页码：351 / 357

页数：7

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