Fluorine-based plasmas: Main features and application in micro-and nanotechnology and in surface treatment

被引:41
作者
Cardinaud, Christophe [1 ]
机构
[1] Univ Nantes, Inst Mat Jean Rouxel, CNRS, UMR6502, Nantes, France
关键词
Cold plasma; Plasma etching; Fluorine; Plasma processing; Plasma-surface interaction; Microelectronics; Microtechnology; HIGH-DENSITY PLASMAS; CYCLOTRON-RESONANCE PLASMA; INDUCTIVELY-COUPLED PLASMA; FLUOROCARBON GASES CF4; BLACK SILICON METHOD; MOLECULAR-DYNAMICS SIMULATIONS; FEATURE PROFILE EVOLUTION; ETCHING MECHANISMS; POLYCRYSTALLINE SILICON; SIDEWALL PASSIVATION;
D O I
10.1016/j.crci.2018.01.009
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Fluorine cold plasmas produced by an electrical discharge in SF6, CF4, CHF3 or C(4)Fg gases, principally, have two main fields of application. The first and historical application is etching of materials for microelectronics and later for micro- and nanotechnology. The second concerns the modification of surface properties, mostly in terms of reflectance and wettability. After an introduction to cold plasmas and plasma-surface interaction principles, the article aims at presenting successively the evolution of fluorine plasma etching processes since the origin with respect to other halogen-based routes in microelectronics, the important and raising application in deep etching and microtechnology, and finally some examples in surface treatment. (C) 2018 Academie des sciences. Published by Elsevier Masson SAS.
引用
收藏
页码:723 / 739
页数:17
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