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Cryogenic etching of deep narrow trenches in silicon
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
2000, 18 (04)
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Deep anisotropic etching of silicon
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1999, 17 (04)
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Pulsed high-density plasmas for advanced dry etching processes
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,
2012, 30 (04)
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Polysilicon gate etching in high density plasmas .5. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl-2/O-2 plasmas
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1997, 15 (01)
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Polysilicon gate etching in high density plasmas .3. X-ray photoelectron spectroscopy investigation of sidewall passivation of silicon trenches using an oxide hard mask
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1996, 14 (04)
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Polysilicon gate etching in high density plasmas .2. X-ray photoelectron spectroscopy investigation of silicon trenches etched using a chlorine-based chemistry
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1996, 14 (03)
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Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
2014, 32 (02)