Thermal stability of tantalum nitride diffusion barriers for Cu metallization formed using plasma immersion ion implantation

被引：13
作者：
Kumar, M
Rajkumar
Kumar, D [1 ]
Paul, AK
机构：
[1] Kurukshetra Univ, Dept Elect Sci, Kurukshetra 136119, Haryana, India
[2] Semicond Complex Ltd, Mohali 160059, India
[3] Haryana Coll Technol & Management, Kaithal, Haryana, India
[4] Cent Sci Instruments Org, Chandigarh, India
来源：
MICROELECTRONIC ENGINEERING | 2005年 / 82卷 / 01期
关键词：
diffusion barrier; copper metallization; plasma immersion ion implantation; thermal stability; tantalum; SEM; XRD;
D O I：
10.1016/j.mee.2005.06.001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Plasma immersion ion implantation (PIII) technique was employed to form Tantalum nitride diffusion barrier films for copper metallization on silicon. Tantalum coated silicon wafers were implanted with nitrogen at two different doses. A copper layer was deposited on the samples to produce Cu/Ta(N)/Si structure. Samples were heated at various temperatures in nitrogen ambient. Effect of nitrogen dose on the properties of the barrier metal was investigated by sheet resistance, X-ray diffraction and scanning electron microscopy measurements. High dose nitrogen implanted tantalum layer was found to inhibit the diffusion of copper up to 700 degrees C. (c) 2005 Elsevier B.V. All rights reserved.
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收藏
页码：53 / 59
页数：7
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