A New SrBi4Ti4O15/CaBi4Ti4O15 Thin Film Capacitor for Excellent Electric Stability

被引：0
|
作者：
Nomura, Shuhei [1 ]
Yamashita, Kaoru [1 ]
Noda, Minoru [1 ]
Uchida, Hiroshi [2 ]
Funakubo, Hiroshi [3 ]
机构：
[1] Kyoto Inst Technol, Grad Sch Sci & Technol, Kyoto 606, Japan
[2] Sophia Univ, Dept Mat & Life Sci, Tokyo, Japan
[3] Tokyo Inst Technol, Dept Innvat Engn Mat, Yokohama, Kanagawa, Japan
来源：
2011 INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS (ISAF/PFM) AND 2011 INTERNATIONAL SYMPOSIUM ON PIEZORESPONSE FORCE MICROSCOPY AND NANOSCALE PHENOMENA IN POLAR MATERIALS | 2011年
关键词：
component; Bismuth Layered Structure Dielectrics (BLSD); film capacitor; electric stability; environmentally-resistant; FERROELECTRIC PROPERTIES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi) dielectric films of Bismuth Layered Structure Dielectrics (BLSD) are prepared on Pt film for constructing stacked-type dielectric capacitors. Compared to perovskite barium titanate family of (Ba,Sr)TiO3 (BST) case, it is observed that the SBTi film keeps a low leakage of 10(-7) A/cm(2) at 250 kV/cm, which is smaller by an order of magnitude than the BST film, even with thinner thickness in the SBTi film. This indicates that the SBTi film is effective for applying to high permittivity capacitor with the barium perovskite oxide family.
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页数：3
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