Hyperthermal organic thin film growth on surfaces terminated with self-assembled monolayers. I. The dynamics of trapping

被引:13
|
作者
Desai, T. V. [1 ]
Hong, S. [1 ]
Woll, A. R. [2 ]
Hughes, K. J. [1 ]
Kaushik, A. P. [1 ]
Clancy, P. [1 ]
Engstrom, J. R. [1 ]
机构
[1] Cornell Univ, Sch Chem & Biomol Engn, Ithaca, NY 14853 USA
[2] Cornell Univ, Cornell High Energy Synchrotron Source, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
MOLECULAR-BEAM; ARGON COLLISIONS; ENERGY-EXCHANGE; PENTACENE; TRANSISTORS; DEPOSITION; MORPHOLOGY; SILICON; SIMULATIONS; SCATTERING;
D O I
10.1063/1.3591965
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have examined the initial stages of growth of a crystalline small molecule organic thin film, diindenoperylene (DIP), on SiO2 surfaces terminated with a series of self-assembled monolayers (SAMs). In this study we make use of supersonic molecular beam techniques to vary the incident kinetic energy of the DIP molecules, and we use in situ, real time synchrotron x-ray scattering to monitor the buildup of each molecular layer in the growing thin film. We find that the effects of the SAMs are most apparent concerning growth in the sub-monolayer regime, before the substrate is entirely covered by the DIP thin film. In this coverage regime on bare SiO2, and SiO2 terminated with either hexamethyldisilazane or perflurooctyltrichlorosilane the adsorption dynamics are consistent with trapping-mediated adsorption as observed in more simple systems, where the probability of adsorption decreases significantly with increasing kinetic energy. Once these surfaces are covered with DIP, however, the adsorption probability increases, particularly at the highest incident kinetic energy, and the probability of adsorption exhibits only a weak dependence on the incident kinetic energy. In contrast, on surfaces terminated by octyl- (OTS) and octadecyltrichlorosilane (ODTS) the trapping probability is high and exhibits little dependence on the incident kinetic energy, essentially the same as what is observed on these same surfaces covered by DIP. We postulate, which is backed by the results of molecular dynamics simulations, that direct molecular insertion into the OTS and ODTS layers is a primary explanation for efficient trapping on these surfaces. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3591965]
引用
收藏
页数:13
相关论文
共 45 条
  • [41] Organic-Inorganic Hybrid Gate Dielectrics Using Self-Assembled Multilayers For Low-Voltage Operating Thin-Film Transistors
    Kim, Yong-Wan
    Ha, Young-Geun
    KOREAN JOURNAL OF METALS AND MATERIALS, 2022, 60 (03): : 220 - 226
  • [42] Room temperature thermally evaporated thin Au film on Si suitable for application of thiol self-assembled monolayers in micro/nano-electro-mechanical-systems sensors
    Mahmoodi, Nasim
    Rushdi, Abduljabbar I.
    Bowen, James
    Sabouri, Aydin
    Anthony, Carl J.
    Mendes, Paula M.
    Preece, Jon A.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (04):
  • [43] Influence of Thiol Self-Assembled Monolayer Processing on Bottom-Contact Thin-Film Transistors Based on n-Type Organic Semiconductors
    Youn, Jangdae
    Dholakia, Geetha R.
    Huang, Hui
    Hennek, Jonnathan W.
    Facchetti, Antonio
    Marks, Tobin J.
    ADVANCED FUNCTIONAL MATERIALS, 2012, 22 (09) : 1856 - 1869
  • [44] Improved performances of inkjet-printed poly(3-hexylthiophene) organic thin-film transistors by inserting an ionic self-assembled monolayer
    Lin, Yan
    Liu, Cheng-Fang
    Song, Yi-Jing
    Yang, Lei
    Zeng, Wen-Jin
    Lai, Wen-Yong
    Huang, Wei
    RSC ADVANCES, 2016, 6 (47): : 40970 - 40974
  • [45] High-Performance n-Channel Organic Thin-Film Transistor for CMOS Circuits Using Electron-Donating Self-Assembled Layer
    Kim, Sung Hoon
    Lee, Sun Hee
    Jang, Jin
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (09) : 1044 - 1046