Light emission from erbium-doped nanocrystalline silicon/silicon dioxide layers under strong optical excitation

被引:0
作者
Kashkarov, PK [1 ]
Shalygina, OA [1 ]
Zhigunov, DM [1 ]
Sapun, DA [1 ]
Teterukov, SA [1 ]
Timoshenko, VY [1 ]
Heitmann, J [1 ]
Schmidt, M [1 ]
Zacharias, M [1 ]
Imakita, K [1 ]
Fujii, M [1 ]
Hayashi, S [1 ]
机构
[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
来源
Advanced Laser Technologies 2004 | 2005年 / 5850卷
关键词
photoluminescence; nanocrystals; erbium ions; population inversion;
D O I
10.1117/12.633527
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Photoluminescence properties of Er-doped nanocrystalline Si/SiO2 structures have been investigated under strong optical excitation. The energy of optical excitation of Si nanocrystals was shown to be almost completely transferred to Er3+ ions in surrounding SiO2. It was found that at high pump intensity the energy transfer process competes successfully with nonradiative Auger-recombination in Si nanocrystals. At high excitation level the population inversion of Er3+ ions was achieved and a decrease of the decay time of the photoluminescence at 1.5 mu m was observed. Possible mechanisms of the shortening of the Er3+ ion lifetime are discussed.
引用
收藏
页码:20 / 24
页数:5
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