Light emission from erbium-doped nanocrystalline silicon/silicon dioxide layers under strong optical excitation
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作者:
Kashkarov, PK
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Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, RussiaMoscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
Kashkarov, PK
[1
]
Shalygina, OA
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Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, RussiaMoscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
Shalygina, OA
[1
]
Zhigunov, DM
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Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, RussiaMoscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
Zhigunov, DM
[1
]
Sapun, DA
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Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, RussiaMoscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
Sapun, DA
[1
]
Teterukov, SA
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Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, RussiaMoscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
Teterukov, SA
[1
]
Timoshenko, VY
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Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, RussiaMoscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
Timoshenko, VY
[1
]
Heitmann, J
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Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, RussiaMoscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
Heitmann, J
[1
]
Schmidt, M
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Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, RussiaMoscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
Schmidt, M
[1
]
Zacharias, M
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Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, RussiaMoscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
Zacharias, M
[1
]
Imakita, K
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Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, RussiaMoscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
Imakita, K
[1
]
Fujii, M
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Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, RussiaMoscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
Fujii, M
[1
]
Hayashi, S
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Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, RussiaMoscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
Hayashi, S
[1
]
机构:
[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
来源:
Advanced Laser Technologies 2004
|
2005年
/
5850卷
关键词:
photoluminescence;
nanocrystals;
erbium ions;
population inversion;
D O I:
10.1117/12.633527
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
Photoluminescence properties of Er-doped nanocrystalline Si/SiO2 structures have been investigated under strong optical excitation. The energy of optical excitation of Si nanocrystals was shown to be almost completely transferred to Er3+ ions in surrounding SiO2. It was found that at high pump intensity the energy transfer process competes successfully with nonradiative Auger-recombination in Si nanocrystals. At high excitation level the population inversion of Er3+ ions was achieved and a decrease of the decay time of the photoluminescence at 1.5 mu m was observed. Possible mechanisms of the shortening of the Er3+ ion lifetime are discussed.