Electrical and optical characterization of field emitter tips with integrated vertically stacked focus

被引:22
作者
Dvorson, L [1 ]
Sha, G [1 ]
Kymissis, I [1 ]
Hong, CY [1 ]
Akinwande, AI [1 ]
机构
[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
基金
美国国家卫生研究院;
关键词
BPM (BPM); collimation; focusing; silicon field emission array;
D O I
10.1109/TED.2003.819700
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A revised version of the authors' BPM that includes quantitatively accurate closed-form expressions for the Fowler-Nordheim coefficients is summarized. For field emitter arrays with integrated focus with the gate and focus biased at the same potential (V-G = V-F) the emission current was 100 nA/tip at 42 V, with about 50% intercepted by the focus. It was deduced that the tip radius of curvature is 2.4-3.6 nm. Analytical model, numerical simulation, and transmission electron microscopy micrographs all gave tip ROC values in this range. We studied electron beam collimation with lowering the focus voltage V-F at different values of the gate voltage V-G and observed that the optimal V-F is about 0.25 V-G, confirming earlier predictions by the authors. From the measurements of beam collimation as a function of cathode-anode separation, we deduced the horizontal velocity of electrons. Under optimal collimation the estimated horizontal velocity was practically zero, and diameter of the spot size produced by a 5 x 5 array with a 40 x 40 mum footprint on the phosphor screen biased at 5 kV and located 15 mm away was at most 50 mum.
引用
收藏
页码:2548 / 2558
页数:11
相关论文
共 25 条
  • [1] CURTIN CJ, 2000, SID TECH DIG, P1263
  • [2] Highly uniform and low turn-on voltage Si field emitter arrays fabricated using chemical mechanical polishing
    Ding, M
    Kim, H
    Akinwande, AI
    [J]. IEEE ELECTRON DEVICE LETTERS, 2000, 21 (02) : 66 - 69
  • [3] Double-gated silicon field emitters
    Dvorson, L
    Kymissis, I
    Akinwande, AI
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (01): : 486 - 494
  • [4] Double-gated Spindt emitters with stacked focusing electrode
    Dvorson, L
    Akinwande, AI
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (01): : 53 - 59
  • [5] Analytical electrostatic model of silicon conical field emitters - Part I
    Dvorson, Leonard
    Ding, Meng
    Akinwande, Akintunde Ibitayo
    [J]. 2001, IEEE, Piscataway, NJ, United States (48)
  • [6] Analytical electrostatic model of silicon conical field emitters - Part II: Extension to devices with focusing electrode
    Dvorson, L
    Ding, M
    Akinwande, AI
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (01) : 144 - 148
  • [7] DVORSON L, 2001, P INT VAC MICR C, P139
  • [8] DVORSON L, 1999, SID TCH DIG, P418
  • [9] Fahlen T. S., 1999, Society for Information Display 1999 International Symposium, P830
  • [10] State-of-the-art of field emission displays
    Gray, HF
    [J]. COCKPIT DISPLAYS IV: FLAT PANEL DISPLAYS FOR DEFENSE APPLICATIONS, 1997, 3057 : 214 - 224