Electrical and optical characterization of field emitter tips with integrated vertically stacked focus

被引:22
作者
Dvorson, L [1 ]
Sha, G [1 ]
Kymissis, I [1 ]
Hong, CY [1 ]
Akinwande, AI [1 ]
机构
[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
基金
美国国家卫生研究院;
关键词
BPM (BPM); collimation; focusing; silicon field emission array;
D O I
10.1109/TED.2003.819700
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A revised version of the authors' BPM that includes quantitatively accurate closed-form expressions for the Fowler-Nordheim coefficients is summarized. For field emitter arrays with integrated focus with the gate and focus biased at the same potential (V-G = V-F) the emission current was 100 nA/tip at 42 V, with about 50% intercepted by the focus. It was deduced that the tip radius of curvature is 2.4-3.6 nm. Analytical model, numerical simulation, and transmission electron microscopy micrographs all gave tip ROC values in this range. We studied electron beam collimation with lowering the focus voltage V-F at different values of the gate voltage V-G and observed that the optimal V-F is about 0.25 V-G, confirming earlier predictions by the authors. From the measurements of beam collimation as a function of cathode-anode separation, we deduced the horizontal velocity of electrons. Under optimal collimation the estimated horizontal velocity was practically zero, and diameter of the spot size produced by a 5 x 5 array with a 40 x 40 mum footprint on the phosphor screen biased at 5 kV and located 15 mm away was at most 50 mum.
引用
收藏
页码:2548 / 2558
页数:11
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