Structural relaxation of amorphous silicon carbide thin films in thermal annealing

被引：14

作者：

Xue, Kun ^{[1
]}

Niu, Li-Sha ^{[1
]}

Shi, Hui-Ji ^{[1
]}

Liu, Jiwen ^{[2
]}

机构：

[1] Tsinghua Univ, Dept Engn Mech, Sch Aerosp, FML, Beijing 100084, Peoples R China

[2] Tianjin Key Lab Photoelect Mat & Dev, Tianjin 300191, Peoples R China

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 12期

基金：

中国国家自然科学基金;

关键词：

SiC thin films; structural relaxation; thermal annealing; recrystallization;

D O I：

10.1016/j.tsf.2007.06.194

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous Si0.4C0.6 thin films were deposited by radio frequency magnetron sputtering onto non-heated single crystal Si substrates, followed by annealing at 800 degrees C or 1100 degrees C in the vacuum chamber. The chemical bond properties and atomic local ordering as a function of the annealing temperature were characterized by Auger electron spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, Infrared absorption spectroscopy, X-ray diffraction, and Raman spectroscopy measurements. We have examined the evolution of microstructure in annealing-induced relaxation process, and investigated the initial stages of thermal crystallization of amorphous Si0.4C0.6. Meanwhile, the structure of excess C in the films also has been studied. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：3855 / 3861

页数：7

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