Structural relaxation of amorphous silicon carbide thin films in thermal annealing

被引：14

作者：

Xue, Kun ^{[1
]}

Niu, Li-Sha ^{[1
]}

Shi, Hui-Ji ^{[1
]}

Liu, Jiwen ^{[2
]}

机构：

[1] Tsinghua Univ, Dept Engn Mech, Sch Aerosp, FML, Beijing 100084, Peoples R China

[2] Tianjin Key Lab Photoelect Mat & Dev, Tianjin 300191, Peoples R China

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 12期

基金：

中国国家自然科学基金;

关键词：

SiC thin films; structural relaxation; thermal annealing; recrystallization;

D O I：

10.1016/j.tsf.2007.06.194

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous Si0.4C0.6 thin films were deposited by radio frequency magnetron sputtering onto non-heated single crystal Si substrates, followed by annealing at 800 degrees C or 1100 degrees C in the vacuum chamber. The chemical bond properties and atomic local ordering as a function of the annealing temperature were characterized by Auger electron spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, Infrared absorption spectroscopy, X-ray diffraction, and Raman spectroscopy measurements. We have examined the evolution of microstructure in annealing-induced relaxation process, and investigated the initial stages of thermal crystallization of amorphous Si0.4C0.6. Meanwhile, the structure of excess C in the films also has been studied. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：3855 / 3861

页数：7

共 25 条

[1] Behavior of oxygen doped SiC thin films:: An x-ray photoelectron spectroscopy study [J].

Avila, A ;

Montero, I ;

Galán, L ;

Ripalda, JM ;

Levy, R .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (01) :212-216

[2] A second-generation reactive empirical bond order (REBO) potential energy expression for hydrocarbons [J].

Brenner, DW ;

Shenderova, OA ;

Harrison, JA ;

Stuart, SJ ;

Ni, B ;

Sinnott, SB .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (04) :783-802

[3] Crystallization process of amorphous silicon-carbon alloys [J].

Calcagno, L ;

Musumeci, P ;

Roccaforte, F ;

Bongiorno, C ;

Foti, G .

THIN SOLID FILMS, 2002, 411 (02) :298-302

[4] EFFECTS OF SUBSTRATE-TEMPERATURE ON CHEMICAL-STRUCTURE OF AMORPHOUS-CARBON FILMS [J].

CHO, NH ;

VEIRS, DK ;

AGER, JW ;

RUBIN, MD ;

HOPPER, CB ;

BOGY, DB .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (05) :2243-2248

[5] Characterization of ultra-hard silicon carbide coatings deposited by RF magnetron sputtering [J].

Costa, AK ;

Camargo, SS ;

Achete, CA ;

Carius, R .

THIN SOLID FILMS, 2000, 377 :243-248

[6] Interpretation of Raman spectra of disordered and amorphous carbon [J].

Ferrari, AC ;

Robertson, J .

PHYSICAL REVIEW B, 2000, 61 (20) :14095-14107

[7] Resonant Raman spectroscopy of disordered, amorphous, and diamondlike carbon [J].

Ferrari, AC ;

Robertson, J .

PHYSICAL REVIEW B, 2001, 64 (07)

[8] MICROSCOPIC STRUCTURE OF AMORPHOUS COVALENT ALLOYS PROBED BY ABINITIO MOLECULAR-DYNAMICS - SIC [J].

FINOCCHI, F ;

GALLI, G ;

PARRINELLO, M ;

BERTONI, CM .

PHYSICAL REVIEW LETTERS, 1992, 68 (20) :3044-3047

[9] The changes of short range ordering in amorphous silicon-carbon alloys by thermal annealing [J].

Gracin, D ;

Radic, N ;

Ivanda, M ;

Andreic, Z ;

Pracek, B .

THIN SOLID FILMS, 1998, 317 (1-2) :206-209

[10] Density and structural changes in SiC after amorphization and annealing [J].

Heera, V ;

Prokert, F ;

Schell, N ;

Seifarth, H ;

Fukarek, W ;

Voelskow, M ;

Skorupa, W .

APPLIED PHYSICS LETTERS, 1997, 70 (26) :3531-3533

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