Thermoelectric properties of single crystalline B4C prepared by a floating zone method

被引：27
作者：
Gunjishima, I [1 ]
Akashi, T [1 ]
Goto, T [1 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
来源：
MATERIALS TRANSACTIONS | 2001年 / 42卷 / 07期
关键词：
boron carbide; single crystal; floating zone; thermoelectric property; electrical conductivity; Seebeck coefficient; thermal conductivity; Hall mobility;
D O I：
10.2320/matertrans.42.1445
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-purity single crystalline B4C, several cm in size, has been prepared by a Floating Zone method. The electrical conductivity, Hall mobility, Seebeck coefficient and thermal conductivity are measured from room temperature to 1023 K. The electrical conductivity is about four times higher than that of sintered B4C. The mobility has increased with increasing temperature, indicating hopping conduction of charge carriers. The Seebeck coefficient is 240-260 mu VK-1, almost independent of temperature. The thermal conductivity is about twice higher than that of sintered B4C. The thermoelectric figure-of-merit is also higher than that of sintered B4C, being 4.2 x 10(-5) K-1 at 1100 K.
引用
收藏
页码：1445 / 1450
页数：6
相关论文
共 32 条
  • [1] Isotope effects on thermal diffusivity of boron carbide
    Arita, Y
    Nishi, Y
    Amaya, M
    Matsui, T
    [J]. THERMOCHIMICA ACTA, 2000, 352 : 39 - 42
  • [2] Aselage T. L., 1987, MATER RES SOC S P, V97, P27
  • [3] SOLUTION GROWTH, STRUCTURE AND COMPOSITION OF BORON-CARBIDE CRYSTALS
    ASELAGE, TL
    VANDEUSEN, SB
    MOROSIN, B
    [J]. JOURNAL OF THE LESS-COMMON METALS, 1990, 166 (01): : 29 - 44
  • [4] PHOSPHORUS DOPING OF BORON CARBIDES
    ASELAGE, TL
    EMIN, D
    SAMARA, GA
    TALLANT, DR
    VANDEUSEN, SB
    EATOUGH, MO
    TARDY, HL
    VENTURINI, EL
    JOHNSON, SM
    [J]. PHYSICAL REVIEW B, 1993, 48 (16): : 11759 - 11766
  • [5] Large enhancement of boron carbides' seebeck coefficients through vibrational softening
    Aselage, TL
    Emin, D
    McCready, SS
    Duncan, RV
    [J]. PHYSICAL REVIEW LETTERS, 1998, 81 (11) : 2316 - 2319
  • [6] THE CORRELATION BETWEEN THE THERMOELECTRIC PROPERTIES AND STOICHIOMETRY IN THE BORON-CARBIDE PHASE B4C-B10.5C
    BOUCHACOURT, M
    THEVENOT, F
    [J]. JOURNAL OF MATERIALS SCIENCE, 1985, 20 (04) : 1237 - 1247
  • [7] STUDIES ON BORON-CARBIDE .3. HOMOGENEITY RANGE OF BORON-CARBIDE PHASE
    BOUCHACOURT, M
    THEVENOT, F
    RUSTE, J
    [J]. JOURNAL OF THE LESS-COMMON METALS, 1978, 59 (02): : 139 - 152
  • [8] THE PROPERTIES AND STRUCTURE OF THE BORON-CARBIDE PHASE
    BOUCHACOURT, M
    THEVENOT, F
    [J]. JOURNAL OF THE LESS-COMMON METALS, 1981, 82 (1-2): : 227 - 235
  • [9] The effect of silicon addition on thermoelectric properties of a B4C ceramic
    Cai, KF
    Nan, CW
    Min, XM
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 67 (03): : 102 - 107
  • [10] CAMPBELL AN, 1987, MATER RES SOC S P, V97, P113
1234