A 5-Gb/s OEIC with voltage-up-converter

被引：10
作者：
Swoboda, R [1 ]
Knorr, J [1 ]
Zimmermann, H [1 ]
机构：
[1] Vienna Univ Technol, Inst Elect Measurements & Circuit Design, A-1040 Vienna, Austria
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2005年 / 40卷 / 07期
关键词：
integrated optoelectronics; optical interconnections; optical receivers; p-i-n photodiodes; silicon;
D O I：
10.1109/JSSC.2005.847227
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper (based on our previous paper at ESS-CIRC 2004, "A 2.4 GHz-Bandwidth OEIC with Voltage-Up-Converter," but new results for 4 Gb/s and 5 Gb/s have been added), an optoelectronic integrated circuit (OEIC) with an integrated voltage-up-converter (VUC) to enhance the frequency response of an integrated pin photodiode is presented. With the VUC a voltage of 11 V is generated on the chip without any additional external components. Thus, for a single-supply environment of 5 V the bandwidth of the OEIC is increased from 1.5 to 2.4 GHz. For data rates of 1, 3, 4, and 5 Gb/s at a bit error rate of 10(-9), sensitivities of -29.3, -24.3, -22.9, and -20.5 dBm, respectively, were measured at a wavelength of 660 nm. For the implementation of the OEIC a modified 0.6-mu m silicon BiCMOS technology with f(T) = 25 GHz is used.
引用
收藏
页码：1521 / 1526
页数：6
相关论文
共 17 条
  • [1] High-speed monolithically integrated silicon photoreceivers fabricated in 130-nm CMOS technology
    Csutak, SM
    Schaub, JD
    Wu, WE
    Shimer, R
    Campbell, JC
    [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 2002, 20 (09) : 1724 - 1729
  • [2] Integrated silicon optical receiver with avalanche photodiode
    Csutak, SM
    Schaub, JD
    Wang, S
    Mogab, J
    Campbell, JC
    [J]. IEE PROCEEDINGS-OPTOELECTRONICS, 2003, 150 (03): : 235 - 237
  • [3] CSUTAK SM, 2002, P OPT FIB COMM C OFC, P585
  • [4] FULLIN E, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P527, DOI 10.1109/IEDM.1994.383353
  • [5] Calculation of the current response of the spatially modulated light CMOS detector
    Genoe, J
    Coppée, D
    Stiens, JH
    Vounckx, RA
    Kuijk, M
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (09) : 1892 - 1902
  • [6] OPTOELECTRONIC SYSTEM INTEGRATION ON SILICON - WAVE-GUIDES, PHOTODETECTORS, AND VLSI CMOS CIRCUITS ON ONE-CHIP
    HILLERINGMANN, U
    GOSER, K
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (05) : 841 - 846
  • [7] A high-speed monolithic silicon photoreceiver fabricated on SOI
    Li, R
    Schaub, JD
    Csutak, SM
    Campbell, JC
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (08) : 1046 - 1048
  • [8] 3Gb/s monolithically integrated photodiode and pre-amplifier in standard 0.18μm CMOS
    Radovanovic, S
    Annema, AJ
    Nauta, B
    [J]. 2004 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS, 2004, 47 : 472 - 473
  • [9] Rooman C, 2001, ECOC'01: 27TH EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION, VOLS 1-6, P296, DOI 10.1109/ECOC.2001.989635
  • [10] Optical receiver IC for CD/DVD/Blue-Laser application
    Sturm, J
    Leifhelm, M
    Schatzmayr, H
    Groiss, S
    Zimmermann, H
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (07) : 1406 - 1413
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