112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers

被引:86
作者
Agarwal, B [1 ]
Schmitz, AE
Brown, JJ
Matloubian, M
Case, MG
Le, M
Lui, M
Rodwell, MJW
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Hughes Res Labs, Malibu, CA 90265 USA
关键词
distributed amplifier; MMIC; traveling-wave amplifier; TWA;
D O I
10.1109/22.739247
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report traveling-wave amplifiers having 1-112 GHz bandwidth with 7 dB gain, and 1-157 GHz bandwidth with 5 dB gain. A third amplifier exhibited 5 dB gain and a 180-GHz high-frequency cutoff. The amplifiers were fabricated in a 0.1-mu m gate length InGaAs/InAlAs HEMT MIMIC technology. The use of gate-line capacitive-division, cascode gain cells and low-loss elevated coplanar waveguide lines have yielded record bandwidth broad-band amplifiers.
引用
收藏
页码:2553 / 2559
页数:7
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