Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length

被引：29

作者：

Crawford, Kevin G. ^{[1
]}

Weil, James D. ^{[1
]}

Shah, Pankaj B. ^{[1
]}

Ruzmetov, Dmitry A. ^{[1
]}

Neupane, Mahesh R. ^{[1
]}

Kingkeo, Khamsouk ^{[1
]}

Birdwell, A. Glen ^{[1
]}

Ivanov, Tony G. ^{[1
]}

机构：

[1] US Army, CCDC, Res Lab, Adelphi, MD 20783 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2020年 / 67卷 / 06期

关键词：

2-D hole gas (2DHG); diamondmetal semiconductor field-effect transistor (MESFET); drain-inducedbarrier lowering (DIBL); electronic devices; gate length; power; radio frequency (RF); surface transfer doping; V2O5; OPERATION;

D O I：

10.1109/TED.2020.2989736

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication and measurement of hydrogen-terminated diamond field-effect transistors (FETs) incorporating V2O5 as a surface acceptor material to induce transfer doping. Comparing a range of gate lengths down to 50 nm, we observe inversely scaling peak output current and transconductance. Devices exhibited a peak drain current of similar to 700 mA/mm and a peak transconductance of similar to 150 mS/mm, some of the highest reported thus far for a diamond metal semiconductor FET (MESFET). Reduced sheet resistance of the diamond surface after V2O5 deposition was verified by four probe measurement. These results show great potential for improvement of diamond FET devices through scaling of critical dimensions and adoption of robust transition metal oxides such as V2O5.

引用

页码：2270 / 2275

页数：6

共 24 条

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