Preparation and ferroelectric properties of (Na0.5Bi0.5)0.94Ba0.06TiO3 thin films deposited on Pt electrodes using LaNiO3 as buffer layer

被引：21

作者：

Fang, Xiao-lei ^{[1
]}

Shen, Bo ^{[1
]}

Zhai, Ji-wei ^{[1
]}

Yao, Xi ^{[1
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2012年 / 38卷

关键词：

NBT-BT; Thin film; Buffer layer; Ferroelectric properties; PIEZOELECTRIC PROPERTIES; BEHAVIOR;

D O I：

10.1016/j.ceramint.2011.04.055

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

(Na0.5Bi0.5)(0.9)Ba0.06TiO3 thin films were deposited on Pt/Ti/SiO2/Si (111) and LaNiO3/Pt/Ti/SiO2/Si (111) substrates by a sol-gel process. The phase structure and ferroelectric properties were investigated. The X-ray diffraction pattern indicated that the (Na(0.5)Bio(0.5))(0.94)Ba0.06TiO3 thin film deposited on Pt/Ti/SiO2/Si (1 1 1) substrates is polycrystalline structure without any preferred orientation. But the thin film deposited on LaNiO3/Pt/Ti/SiO2/Si substrates shows highly (100) orientation (f >= 81%). The leakage current density for the two thin films is about 6 x 10(-3) A/cm(2) at 250 kV/cm, and thin film deposited on LaNiO3/Pt/Ti/SiO2/Si substrates possessed a much lower leakage current under high electric field. The hysteresis loops at an applied electric field of 300 kV/cm and 10 kHz were acquired for the thin films. The thin films deposited on LaNiO3/Pt/Ti/SiO2/Si substrates showed improved ferroelectricity. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：S83 / S86

页数：4

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