Mott transition in electron-hole plasmas

被引：6
|
作者：
Semkat, D. [1 ]
Richter, F. [1 ]
Kremp, D. [1 ]
Manzke, G. [1 ]
Kraeft, W-D [1 ]
Henneberger, K. [1 ]
机构：
[1] Univ Rostock, Inst Phys, D-18051 Rostock, Germany
来源：
PROGRESS IN NONEQUILIBRIUM GREEN'S FUNCTIONS IV | 2010年 / 220卷
关键词：
LINEAR OPTICAL-RESPONSE; IONIZATION EQUILIBRIUM; EXCITED SEMICONDUCTORS; ENERGY-SPECTRUM; DENSE-PLASMAS; CONDENSATION; HYDROGEN; CARRIERS; EQUATION; STATE;
D O I：
10.1088/1742-6596/220/1/012005
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
In connection with the ionization equilibrium of an electron-hole plasma in a highly excited semiconductor, the influence of many-particle effects on both the chemical potentials of carriers and the Mott transition of para-excitons in zinc selenide (ZnSe) is investigated over a wide range of temperatures and carrier densities. Special attention is directed to the determination of the region where an excitonic fraction can exist and, therefore, a possible Bose-Einstein condensate can occur at low temperatures.
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页数：10
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