X-Ray Diffraction Analysis of Residual Stress in Thin Polycrystalline Anatase Films and Elastic Anisotropy of Anatase

被引:14
作者
Matej, Z. [1 ]
Kuzel, R. [1 ]
Nichtova, L. [1 ]
机构
[1] Charles Univ Prague, Dept Condensed Matter Phys, Fac Math & Phys, Prague 12116 2, Czech Republic
来源
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE | 2011年 / 42A卷 / 11期
关键词
RAMAN-SPECTROSCOPY; SINGLE-CRYSTAL; TIO2; FILMS; SEMICONDUCTOR PHOTOCATALYSIS; HYDROPHILIC CONVERSION; THICKNESS DEPENDENCE; SILICON; CONSTANTS; CRYSTALLIZATION; DEPOSITION;
D O I
10.1007/s11661-010-0468-z
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The importance of residual stress in anatase thin films for their photo-induced hydrophilicity was proved recently. Detailed X-ray diffraction (XRD) studies of residual stresses in titanium dioxide films are presented here. Measurements including multiple hkl reflections on several series of these films revealed the presence of tensile stresses in the films that were obtained by crystallization from amorphous state. Significant anisotropy of the strain was also found and compared with that of anatase, resulting from its theoretically calculated single-crystal elastic constants. The XRD data support the experimental evidence of the hypothesis that the [00l] axis is the elastically soft anatase direction, whereas the directions in the [h00] x [hk0] plane are elastically stiff. This is in agreement with the anisotropy predicted by single-crystal elastic constants that are obtained from ab-initio calculations. Residual stress analysis for materials with tetragonal symmetry is described and the theory is used to analyze the data. The anisotropy is very different from that for the rutile phase, and the experimental results agree well with the values calculated for anatase. A simplified method of XRD residual stress analysis in thin anatase films by total pattern fitting (TPF) is also presented. Tensile stresses are formed during the crystallization process and increase rapidly with reduced film thickness. They inhibit crystallization, which is then very slow in the thinnest films.
引用
收藏
页码:3323 / 3332
页数:10
相关论文
共 60 条
[1]   QUANTITATIVE MEASUREMENT OF RESIDUAL BIAXIAL STRESS BY RAMAN-SPECTROSCOPY IN DIAMOND GROWN ON A TI ALLOY BY CHEMICAL-VAPOR-DEPOSITION [J].
AGER, JW ;
DRORY, MD .
PHYSICAL REVIEW B, 1993, 48 (04) :2601-2607
[2]   Residual stresses and Raman shift relation in anatase TiO2 thin film [J].
Alhomoudi, Ibrahim A. ;
Newaz, G. .
THIN SOLID FILMS, 2009, 517 (15) :4372-4378
[3]   EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J].
ANASTASSAKIS, E ;
PINCZUK, A ;
BURSTEIN, E ;
POLLAK, FH ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1970, 8 (02) :133-+
[4]  
[Anonymous], 2010, LEHRBUCH KRISTALLPHY
[5]   PHOTOCATALYTIC HYDROGENATION OF CH3CCH WITH H2O ON SMALL-PARTICLE TIO2 - SIZE QUANTIZATION EFFECTS AND REACTION INTERMEDIATES [J].
ANPO, M ;
SHIMA, T ;
KODAMA, S ;
KUBOKAWA, Y .
JOURNAL OF PHYSICAL CHEMISTRY, 1987, 91 (16) :4305-4310
[6]   High-pressure polymorphs of anatase TiO2 [J].
Arlt, T ;
Bermejo, M ;
Blanco, MA ;
Gerward, L ;
Jiang, JZ ;
Olsen, JS ;
Recio, JM .
PHYSICAL REVIEW B, 2000, 61 (21) :14414-14419
[7]   Reactive magnetron sputtering of TiOx films [J].
Baroch, P ;
Musil, J ;
Vlcek, J ;
Nam, KH ;
Han, JG .
SURFACE & COATINGS TECHNOLOGY, 2005, 193 (1-3) :107-111
[8]  
BEHNKEN H, 1986, Z METALLKD, V77, P620
[9]  
DeWolf I, 1996, SEMICOND SCI TECH, V11, P139, DOI 10.1088/0268-1242/11/2/001
[10]  
Dopita M, 2006, Z KRISTALLOGR, P67