Electrical evidence of unstable anodic interface in Ru/HfOx/TiN unipolar resistive memory

被引：63

作者：

Lee, Heng Yuan ^{[1
,3
]}

Chen, Pang Shiu ^{[2
]}

Wu, Tai Yuan ^{[3
]}

Wang, Ching Chiun ^{[3
]}

Tzeng, Pei Jer ^{[3
]}

Lin, Cha Hsin ^{[3
]}

Chen, Frederick ^{[3
]}

Tsai, Ming-Jinn ^{[3
]}

Lien, Chenhsin ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan

[2] MingShin Univ Sci & Technol, Hsinchu 304, Taiwan

[3] Ind Technol Res Inst, Hsinchu 310, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 14期

关键词：

D O I：

10.1063/1.2908928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Unipolar resistive switching behaviors of Ru/HfOx/TiN devices with Ru as anode were investigated. Wide dispersion of switching operation parameters was observed. The conduction mechanisms in low and high resistance states of the devices were characterized to be Ohmic-like and tunneling, respectively. The band offset of the Ru/HfOx interface was extracted from the measured tunneling current versus voltage characteristics. Instability of the band offset at the anodic interface was observed and may be responsible for the wide fluctuation of the operation voltage in the Ru/HfOx/TiN device at a high resistance state. The possible mechanism for these unstable characteristics of band offset at the Ru/HfOx interface is also discussed. (C) 2008 American Institute of Physics.

引用

页数：3

共 15 条

[1] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
Baek, IG
Lee, MS
Seo, S
Lee, MJ
Seo, DH
Suh, DS
Park, JC
Park, SO
Kim, HS
Yoo, IK
Chung, UI
Moon, JT
[J]. IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 587 - 590
[2] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715
Choi, BJ
Jeong, DS
Kim, SK
Rohde, C
Choi, S
Oh, JH
Kim, HJ
Hwang, CS
Szot, K
Waser, R
Reichenberg, B
Tiedke, S
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)
[3] Thermally grown ruthenium oxide thin films
Jelenkovic, EV
Tong, KY
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (05): : 2319 - 2325
[4] Jha R, 2005, INT EL DEVICES MEET, P47
[5] Improvement of resistive memory switching in NiO using IrO2
Kim, D. C.
Lee, M. J.
Ahn, S. E.
Seo, S.
Park, J. C.
Yoo, I. K.
Baek, I. G.
Kim, H. J.
Yim, E. K.
Lee, J. E.
Park, S. O.
Kim, H. S.
Chung, U-In
Moon, J. T.
Ryu, B. I.
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (23)
[6] Characteristics of Ru etching using ICP and helicon O2/Cl2 plasmas
Kim, HW
[J]. THIN SOLID FILMS, 2005, 475 (1-2) : 32 - 35
[7] Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
Kim, Kyung Min
Choi, Byung Joon
Shin, Yong Cheol
Choi, Seol
Hwang, Cheol Seong
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (01)
[8] Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films
Kim, Kyung Min
Choi, Byung Joon
Hwang, Cheol Seong
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (24)
[9] Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
Kinoshita, K.
Tamura, T.
Aoki, M.
Sugiyama, Y.
Tanaka, H.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (10)
[10] Kinoshita K, 2007, MATER RES SOC SYMP P, V997, P211

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