Semiconductor mode-locked lasers integrated with electroabsorption optical modulators

被引：0

作者：

Sato, K ^{[1
]}

机构：

[1] NTT Corp, NTT Network Innovat Labs, Yokosuka, Kanagawa 2390847, Japan

来源：

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS | 2005年 / 88卷 / 09期

关键词：

semiconductor mode-locked laser; electro-absorption modulator; distributed Bragg reflector; short optical pulse;

D O I：

10.1002/ecjb.20193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The basic configuration and characteristics of an actively mode-locked semiconductor laser integrated with an electroabsorption optical modulator are described theoretically and experimentally. With regard to 1.55-mu m 40-GHz semiconductor mode-locked lasers integrated with distributed Bragg reflectors with different bandwidths, the results of numerical analysis and experimental evaluations are described. By means of increasing the bandwidth of the distributed Bragg reflector, the optical spectrum is expanded and short pulses with a pulse width of 1.6 ps after linear compression by anomalous dispersion are generated. (c) 2005 Wiley Periodicals, Inc.

引用

页码：1 / 9

页数：9

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