Compact silicon tunable Fabry-Perot resonator with low power consumption

被引:65
作者
Barrios, CA [1 ]
Almeida, VR [1 ]
Panepucci, RR [1 ]
Schmidt, BS [1 ]
Lipson, M [1 ]
机构
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
Bragg reflector; Fabry-Perot (F-P) cavity; integrated optics; optical modulator; silicon optoelectronics;
D O I
10.1109/LPT.2003.822251
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate a 20-mum-long tunable optical resonator integrated on a silicon-on-insulator waveguide. The microresonator consists of a planar Fabry-Perot microcavity defined by deep Si/SiO2 Bragg reflectors with a high finesse of 11.2. The device is electrically driven and shows a modulation depth as high as 53% for a power consumption of only 20 mW.
引用
收藏
页码:506 / 508
页数:3
相关论文
共 8 条
[1]   Low-power-consumption short-length and high-modulation-depth silicon electrooptic modulator [J].
Barrios, CA ;
de Almeida, VR ;
Lipson, M .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2003, 21 (04) :1089-1098
[2]  
COCORULLO G, 1994, OPT LETT, V19, P420
[3]   SILICON THERMOOPTIC MICROMODULATOR WITH 700-KHZ - 3-DB BANDWIDTH [J].
COCORULLO, G ;
IODICE, M ;
RENDINA, I ;
SARRO, PM .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (04) :363-365
[4]   Fast and low-power thermooptic switch on thin silicon-on-insulator [J].
Espinola, R.L. ;
Tsai, M.-C. ;
Yardley, James T. ;
Osgood Jr., R.M. .
IEEE Photonics Technology Letters, 2003, 15 (10) :1366-1368
[5]   SILICON-ON-INSULATOR OPTICAL RIB WAVE-GUIDE LOSS AND MODE CHARACTERISTICS [J].
RICKMAN, AG ;
REED, GT ;
NAMAVAR, F .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1994, 12 (10) :1771-1776
[6]   SILICON-BASED OPTOELECTRONICS [J].
SOREF, RA .
PROCEEDINGS OF THE IEEE, 1993, 81 (12) :1687-1706
[7]  
TREYZ GV, 1991, APPL PHYS LETT, V59, P7
[8]   Zero-gap directional coupler switch integrated into a silicon-on insulator for 1.3-mu m operation [J].
Zhao, CZ ;
Liu, EK ;
Li, GZ ;
Gao, Y ;
Guo, CS .
OPTICS LETTERS, 1996, 21 (20) :1664-1666