Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors

被引：27
作者：
Doan, T. C. [1 ]
Li, J. [1 ]
Lin, J. Y. [1 ]
Jiang, H. X. [1 ]
机构：
[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA
来源：
AIP ADVANCES | 2016年 / 6卷 / 07期
基金：
美国国家科学基金会;
关键词：
PRESSURE; GAN;
D O I：
10.1063/1.4959595
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Solid-state neutron detectors with high performance are highly sought after for the detection of fissile materials. However, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We report here the first successful demonstration of a direct-conversion semiconductor neutron detector with an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. The detector is based on a 2.7 mu m thick B-10-enriched hexagonal boron nitride (h-BN) epitaxial layer. The results represent a significant step towards the realization of practical neutron detectors based on h-BN epilayers. Neutron detectors based on h-BN are expected to possess all the advantages of semiconductor devices including wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices. (C) 2016 Author(s).
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页数：11
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