Cubic GaN growth on (311)A GaAs substrate by MOVPE

被引：3

作者：

Sanorpim, Sakuntam ^{[1
]}

Discharoen, Nuttapong ^{[1
]}

Onabe, Kentaro ^{[2
]}

机构：

[1] Chulalongkorn Univ, Dept Phys, Fac Sci, Bangkok 10330, Thailand

[2] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

GaN; MOVPE; growth; structure; interface formation; morphology; VAPOR-PHASE EPITAXY; GAAS(001); TEMPERATURE; GAAS(100); LAYERS;

D O I：

10.1002/pssc.200983536

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Cubic GaN layers has been grown on (311) A GaAs substrates by MOVPE at relatively high growth temperature at 900 degrees C. Cubic GaN (311) grew on the (311) A GaAs with and in-plane epitaxial relationship of [01-1](GaN)//[01-1](GaAs) and [200](GaN)//[200](GaAs). Full width at half maximum of the cubic GaN (002) X-ray rocking curve is less than 20 arc min, which is comparable to that of the cubic GaN grown on (001) substrate. The lattice constant is in the range of 4.502 to 4.506 angstrom. Even at the growth temperature as high as 900 degrees C, the interface between cubic GaN layer and GaAs substrate is remarkably smooth without any voids, owing to the suppression of the (111) surface steps on the (311)A substrate surface. These results indicate that the (311)A-oriented GaAs is a candidate substrate for the MOVPE growth of cubic GaN layer in avoiding the thermal decomposition of GaAs and in improving the interface and surface morphologies. (c) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3

共 12 条

[1] Characterization of MOVPE-grown GaN layers on GaAs (111)B with a cubic-GaN (111) epitaxial intermediate layer [J].

Sanorpim, S ;

Takuma, E ;

Katayama, R ;

Ichinose, H ;

Onabe, K ;

Shiraki, Y .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 240 (02) :305-309

[2]

Sanorpim S, 2002, PHYS STATUS SOLIDI B, V234, P840, DOI 10.1002/1521-3951(200212)234:3<840::AID-PSSB840>3.0.CO

[3]

2-K

[4] Effects of growth temperature in selective-area growth of cubic GaN on GaAs (100) by MOVPE [J].

Sanorpim, S ;

Wu, J ;

Onabe, K ;

Shiraki, Y .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 :1124-1128

[5]

Sanorpim S, 2002, PHYS STATUS SOLIDI A, V192, P446, DOI 10.1002/1521-396X(200208)192:2<446::AID-PSSA446>3.0.CO

[6]

2-A

[7] Effect of growth temperature on polytype transition of GaN from zincblende to wurtzite [J].

Suandon, Siripen ;

Sanorpim, Sakuntam ;

Yoodee, Kajornyod ;

Onabe, Kentaro .

THIN SOLID FILMS, 2007, 515 (10) :4393-4396

[8] IMPROVEMENT OF THE THRESHOLD CURRENT OF ALGAAS/GAAS SINGLE QUANTUM-WELL LASERS BY SUBSTRATE TILTING [J].

TAO, IW ;

SCHWARTZ, C ;

WANG, WI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :838-840

[9] Cubic dominant GaN growth on (001)GaAs substrates by hydride vapor phase epitaxy [J].

Tsuchiya, H ;

Sunaba, K ;

Yonemura, S ;

Suemasu, T ;

Hasegawa, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (1AB) :L1-L3

[10] Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy [J].

Wu, J ;

Yaguchi, H ;

Onabe, K ;

Ito, R ;

Shiraki, Y .

APPLIED PHYSICS LETTERS, 1997, 71 (15) :2067-2069

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