Correlation among structural, electrical, and deep-level properties of Fe centers implanted in InP

被引：3

作者：

Gasparotto, A

Cesca, T

Fraboni, B

Priolo, F

机构：

[1] Univ Padua, INFM, I-35131 Padua, Italy

[2] Univ Padua, Dept Phys, I-35131 Padua, Italy

[3] Univ Catania, INFM, I-95123 Catania, Italy

[4] Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy

[5] Univ Bologna, INFM, I-40127 Bologna, Italy

[6] Univ Bologna, Dept Phys, I-40127 Bologna, Italy

来源：

PHYSICA B-CONDENSED MATTER | 2003年 / 340卷

关键词：

InP; ion implantation; electrical properties;

D O I：

10.1016/j.physb.2003.09.021

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The Fe-related properties in high-temperature Fe implanted and annealed InP were studied by means of PIXE-RBS-channeling and correlated with the results of electrical (current-voltage) measurements. It is found that the point defect mobility, the concentration of substitutional Fe, and the resistivity of the implanted layer, all follow a similar temperature behavior. For annealing temperatures higher than 500degreesC semi-insulating behavior controlled by the Fe2+ deep levels is observed. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：403 / 406

页数：4

共 7 条

[1]

Cesca T, 2002, MATER RES SOC SYMP P, V719, P297

[2] Local structure of iron implanted in indium phosphide [J].