A New Dynamic Selector Based on the Bipolar RRAM for the Crossbar Array Application

被引：31

作者：

Huang, Yinglong ^{[1
]}

Huang, Ru ^{[1
]}

Pan, Yue ^{[1
]}

Zhang, Lijie ^{[1
]}

Cai, Yimao ^{[1
]}

Yang, Gengyu ^{[1
]}

Wang, Yangyuan ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 08期

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

Nonvolatile memory; resistive switching; RRAM; selector; HIGH-DENSITY; DIODES; MEMORY;

D O I：

10.1109/TED.2012.2201158

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Crossbar array architecture is usually used for the high-density integration of the RRAM device. However, the large sneak current in the passive crossbar array limits the increase in the integration density. In this brief, the bipolar TiN/TaOx/Pt RRAM device is proposed as the dynamic selector for the unipolar Pt/TaOx/Pt RRAM device to suppress the sneak current in the crossbar array. The testing results show that the bipolar RRAM can act as a good selector, and the sneak current is reduced by about two orders estimated by the 1/2 V-read voltage scheme. With the suppressed sneak current, the maximum size of the crossbar array with the bipolar RRAM selector can be increased to more than 1 Mb according to the simulation results, indicating that the bipolar RRAM selector has great potential for the high-density memory applications.

引用

页码：2277 / 2280

页数：4

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