Optical emission spectroscopy as a process control tool during plasma enhanced chemical vapor deposition of microcrystalline silicon thin films

被引：5

作者：

Du, C. C. ^{[1
]}

Wei, T. C. ^{[2
,3
]}

Chang, C. H. ^{[1
]}

Lee, S. L. ^{[1
]}

Liang, M. W. ^{[1
]}

Huang, J. R. ^{[1
]}

Wu, C. H. ^{[1
]}

Shirakura, A. ^{[4
]}

Morisawa, R. ^{[5
]}

Suzuki, T. ^{[5
]}

机构：

[1] Ind Technol Res Inst, Dept Solar Energy, Hsinchu 31040, Taiwan

[2] Chung Yuan Christian Univ, R&D Ctr Membrane Technol, Chungli 32023, Taiwan

[3] Chung Yuan Christian Univ, Dept Chem Engn, Chungli 32023, Taiwan

[4] Kanagawa Acad Sci & Technol, Kawasaki, Kanagawa 2130012, Japan

[5] Keio Univ, Dept Mech Engn, Yokosuka, Kanagawa 2370061, Japan

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 11期

关键词：

Tandem solar cell; Microcrystalline silicon thin film; Process control; Optical emission spectroscopy; SI;

D O I：

10.1016/j.tsf.2011.08.110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The decisive criterion associated with the species emission intensity ratio (H alpha/SiH*) which characterizes the crystallinity of microcrystalline silicon (mu c-Si) film was found to display an unstable behavior resulting from species concentration variation during mu c-Si film growth with optical emission spectroscopy (OES) tool. In this study, a real-time process control system i.e. closed-loop system was developed. It aims to control the species intensity ratio with OES device in a very high frequency (VHF) plasma enhanced chemical vapor deposition reactor, via modulating the VHF power and silane dilution to improve mu c-Si film growth for high efficiency a-Si/mu c-Si tandem solar cell. The experiment results show that the closed-loop system stabilized the H alpha/SiH* intensity ratio within a variation of 5% during the mu c-Si film deposition process. Higher growth rate of mu c-Si film with the same crystallinity was obtained in the closed loop system which consumed less power and SiH4 gas than in the open loop system, i.e. without process control. (c) 2011 Elsevier B.V. All rights reserved.

引用

页码：3999 / 4002

页数：4

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