The role of the temperature boundary conditions on the gate electrode on the heat distribution in 25 nm FD-SOI MOSFETs with SiO2 and gate-stack (high-k dielectric) as the gate oxide

被引：0
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作者：
Raleva, Katerina [1 ]
Vasileska, Dragica [2 ]
Goodnick, Stephen M. [2 ]
机构：
[1] FEIT, Skopje, Macedonia
[2] Arizona State Univ, Tempe, AZ 85287 USA
来源：
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | 2007年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：187 / +
页数：2
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