Polarization Image Sensor for Highly Sensitive Polarization Modulation Imaging Based on Stacked Polarizers

被引:21
作者
Sasagawa, Kiyotaka [1 ]
Okada, Ryoma [1 ]
Haruta, Makito [1 ]
Takehara, Hironari [1 ]
Tashiro, Hiroyuki [1 ,2 ]
Ohta, Jun [1 ]
机构
[1] Nara Inst Sci & Technol, Grad Sch Sci & Technol, Div Mat Sci, Ikoma 6300192, Japan
[2] Kyushu Univ, Fac Med Sci, Div Med Technol, Dept Hlth Sci, Fukuoka 8128582, Japan
关键词
CMOS image sensor; electric-field imaging; ON-chip polarizer; polarization image sensor; polarization modulation imaging; SYSTEM;
D O I
10.1109/TED.2022.3140288
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this article, We demonstrated an image sensor for detecting changes in polarization with high sensitivity. For this purpose, we constructed an optical system with a two-layer structure, comprising an external polarizer and polarizers on a pixel array. An external polarizer is used to enhance the polarization rotation while reducing the intensity to avoid pixel saturation of the image sensor. Using a two-layer structure, the two polarizers can be arranged under optimal conditions and the image sensor can achieve high polarization-change detection performance. We fabricated the polarization image sensor using a 0.35-mu m CMOS process and, by averaging 50 x 50 pixels and 96 frames, achieved a polarization rotation detection limit of 5.2 x 10(-4)degrees at a wavelength of 625 nm. We also demonstrated the applicability of electric-field distribution imaging using an electrooptic crystal (ZnTe) for weak-polarization-change distribution measurements.
引用
收藏
页码:2924 / 2931
页数:8
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