Optical properties of textured V2O5/Si thin films deposited by reactive magnetron sputtering

被引:36
作者
Atuchin, V. V. [1 ]
Ayupov, B. M. [2 ]
Kochubey, V. A. [1 ]
Pokrovsky, L. D. [1 ]
Ramana, C. V. [3 ]
Rumiantsev, Yu. M. [4 ]
机构
[1] RAS, Inst Semicond Phys, Lab Opt Mat & Struct, SB, Novosibirsk 630090, Russia
[2] RAS, SB, Lab Dielect Layers, Inst Inorgan Chem, Novosibirsk 630090, Russia
[3] Univ Michigan, Dept Geol Sci, Nanosci Res Grp, Ann Arbor, MI 48109 USA
[4] RAS, SB, Inst Inorgan Chem, Lab Epitaxial Layers, Novosibirsk 630090, Russia
关键词
sputter-deposition; vanadium oxide; RHEED; laser ellipsometry;
D O I
10.1016/j.optmat.2007.05.040
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films Of V2O5 were deposited on Si substrates by reactive DC magnetron sputtering of vanadium metal target in Ar/O-2 low-pressure gas mixture. The phase composition of the films was examined with reflection high-energy electron diffraction (RHEED) at 65 keV. The presence of V2O5 textured polycrystal with preferencial orientation of [10 01 was found for the range of 32.7-40.8% O-2/(O-2 + Ar) ratio. The films are polycrystal without pronounced ordering for the range of 40.8-48.9% O-2/(O-2 + Ar) ratio. Optical characterization of the films was produced with laser ellipsometry (A = 0.6328 mu m) and reflection spectra measurements. For V2O5 film deposited at 32.7 O-2/(O-2 + Ar) ratio a uniform refractive index profile was found with n = 2.67, optical absorption coefficient k = 0.0011 and thickness d = 165.0 nm. These optical parameters are very reproducible and weakly dependent on gas mixture composition within the range pointed above. Optical anisotropy Of V2O5 film has not been detected. The thickness of the transition layer at the V2O5/Si interface has been estimated to be similar to 20 um. The wear resistance of the oxide films was tested with sand-bombardment method and good mechanical stability of the samples has been confirmed. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:1145 / 1148
页数:4
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